The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Dec. 16, 2011
Applicants:

Chien-an Chen, Hsinchu, TW;

Yen-shuo Su, Hsinchu County, TW;

Ying Xiao, Zhubei, TW;

Chin-hsiang Lin, Hsinchu, TW;

Inventors:

Chien-An Chen, Hsinchu, TW;

Yen-Shuo Su, Hsinchu County, TW;

Ying Xiao, Zhubei, TW;

Chin-Hsiang Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32963 (2013.01); H01J 37/3299 (2013.01); H01L 21/31116 (2013.01);
Abstract

The present disclosure relates to a semiconductor body etching apparatus having a multi-zone end point detection system. In some embodiments, the multi-zone end point detection system has a processing chamber that houses a workpiece that is etched according to an etching process. A plurality of end point detector (EPD) probes are located within the processing chamber. Respective EPD probes are located within different zones in the processing chamber, thereby enabling the detection of end point signals from multiple zones within the processing chamber. The detected end point signals are provided from the plurality of EPD probes to an advanced process control (APC) unit. The APC unit is configured to make a tuning knob adjustment to etching process parameters based upon the detected end point signals and to thereby account for etching non-uniformities.


Find Patent Forward Citations

Loading…