The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Nov. 11, 2013
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Satoshi Soeta, Fukui, JP;
Shinji Nakano, Minami-echizen-cho, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
The invention provides a method of manufacturing an N-type silicon single crystal having a resistivity of 0.05 Ωcm or less and a crystal orientation of <100> by a Czochralski method, including: bringing a seed crystal into contact with a melt doped with a dopant in a crucible; forming a cone while adjusting a taper angle θ such that a ratio of the total of individual lengths of areas each having a taper angle θ ranging from 25° to 45° to length L of a cone side surface is 20% or less, where θ being formed between a growth direction of the silicon single crystal and the cone side surface when the cone is seen in a diameter direction of the silicon single crystal; and successively forming a straight body. The method can inhibit the generation of dislocations during the cone formation without reducing the yield and productivity.