The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2018

Filed:

Feb. 24, 2014
Applicant:

Ethicon Endo-surgery, Inc., Cincinnati, OH (US);

Inventors:

Emily A. Schellin, Cincinnati, OH (US);

Michael J. Vendely, Lebanon, OH (US);

Lauren S. Weaner, West Chester, OH (US);

Christopher W. Widenhouse, Clarksville, OH (US);

Taylor W. Aronhalt, Loveland, OH (US);

Donald L. Reynolds, II, West Chester, OH (US);

Michael J. Miller, Mason, OH (US);

Frederick E. Shelton, IV, Hillsboro, OH (US);

Trevor J. Barton, Cincinnati, OH (US);

Assignee:

Ethicon LLC, Guaynabo, PR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 67/00 (2017.01); B29C 67/20 (2006.01); B29C 43/00 (2006.01); B29C 43/52 (2006.01); A61B 17/072 (2006.01); B29K 105/04 (2006.01); B29L 31/00 (2006.01); A61B 17/064 (2006.01); A61B 17/00 (2006.01);
U.S. Cl.
CPC ...
B29C 67/20 (2013.01); A61B 17/07207 (2013.01); A61B 17/07292 (2013.01); B29C 43/00 (2013.01); B29C 43/52 (2013.01); A61B 17/0644 (2013.01); A61B 2017/00004 (2013.01); A61B 2017/00526 (2013.01); A61B 2017/07242 (2013.01); A61B 2017/07278 (2013.01); A61B 2017/07285 (2013.01); B29K 2105/04 (2013.01); B29K 2995/0056 (2013.01); B29L 2031/7546 (2013.01);
Abstract

A method is disclosed for changing the spring rate of an implantable layer for use with a surgical instrument which includes the steps of obtaining an implantable layer having a first spring rate, wherein the implantable layer is at least partially comprised of a material having a glass transition temperature and a melting temperature, heating the implantable layer to a temperature higher than the glass transition temperature and lower than the melting temperature, deforming the implantable layer to change the first spring rate to a second spring rate, wherein the second spring rate is different than the first spring rate, allowing the implantable layer to cool below the glass transition temperature, and releasing the implantable layer.

Published as:
US2014166724A1; US2014166725A1; US2014166726A1; EP2910196A1; EP2910197A2; EP2910198A2; EP2910199A1; EP2910200A1; EP2910201A2; US2015239180A1; US2015238185A1; US2015238186A1; US2015238187A1; US2015238188A1; US2015238191A1; WO2015126552A1; WO2015126554A1; WO2015126555A1; WO2015126556A1; WO2015126655A1; WO2015126656A1; WO2015126658A2; WO2015126660A1; EP2913011A1; EP2918234A2; EP2910201A3; EP2910197A3; EP2910198A3; EP2918234A3; WO2015126658A3; EP2910196B1; US9693777B2; US9757124B2; EP2910197B1; US9775608B2; EP2910198B1; US9839422B2; US9839423B2; US9884456B2; PL2910198T3; EP2910199B1; EP2913011B1; EP2910201B1; EP3581119A1; EP2918234B1; EP3581119B1;

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