The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Sep. 15, 2016
Qualcomm Incorporated, San Diego, CA (US);
Ukjin Roh, San Diego, CA (US);
Youn Sung Choi, San Diego, CA (US);
Shashank Ekbote, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Fin Field Effect transistors (FETs) (FinFETs) employing dielectric material layers to apply stress to channel regions are disclosed. In one aspect, a FinFET is provided that includes a substrate and a Fin disposed over the substrate. The Fin includes a source, a drain, and a channel region between the source and drain. A gate is disposed around the channel region. To apply stress to the channel region, a first dielectric material layer is disposed over the substrate and adjacent to one side of the Fin. A second dielectric material layer is disposed over the substrate and adjacent to another side of the Fin. The dielectric material layers apply stress along the Fin, including the channel region. The level of stress applied by the dielectric material layers is not dependent on the volume of each layer.