The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Jul. 25, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Chia-Cheng Tai, Hsinchu, TW;
Chun-Liang Tai, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 21/311 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); B82Y 10/00 (2011.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66818 (2013.01); B82Y 10/00 (2013.01); H01L 21/02057 (2013.01); H01L 21/02233 (2013.01); H01L 21/02236 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 29/0673 (2013.01); H01L 29/0676 (2013.01); H01L 29/401 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66484 (2013.01); H01L 29/66666 (2013.01); H01L 29/66742 (2013.01); H01L 29/785 (2013.01); H01L 29/78642 (2013.01);
Abstract
A semiconductor structure includes a substrate and a fin. The fin extends from the substrate and is formed with a hole therethrough. The hole is defined by a confronting pair of wall parts. One of the wall parts is more arcuate than the other of the wall parts. A method for fabricating the semiconductor structure is also disclosed.