The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Jan. 24, 2017
Stmicroelectronics SA, Montrouge, FR;
Stéphane Denorme, Crolles, FR;
Philippe Candelier, Saint Mury Monteymond, FR;
STMICROELECTRONICS SA, Montrouge, FR;
Abstract
An integrated circuit includes a silicon-on-insulator substrate that includes a semiconductor film located above a buried insulating layer. A first electrode of a silicide material overlies the semiconductor film. A sidewall insulating material is disposed along sidewalls of the first electrode. A dielectric layer is located between the first electrode and the semiconductor film. A second electrode includes a silicided zone of the semiconductor film, which is located alongside the sidewall insulating material and extends at least partially under the dielectric layer and the first electrode. The first electrode, the dielectric layer and the second electrode form a capacitor that is part of a circuit of the integrated circuit.