The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Jan. 31, 2017
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Kyung Seob Oh, Suwon-si, KR;

Kyoung Moo Harr, Suwon-si, KR;

Doo Hwan Lee, Suwon-si, KR;

Seung Chul Oh, Suwon-si, KR;

Hyoung Joon Kim, Suwon-si, KR;

Yoon Suk Cho, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 23/3114 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01);
Abstract

A fan-out semiconductor package includes a frame having a through hole, a semiconductor chip disposed in the through hole and including connection pads, an encapsulant encapsulating at least a portion of the frame and the semiconductor chip, and a redistribution layer disposed on the frame and the semiconductor chip and including a first region and a second region. In the first region, a first via and a second via, electrically connected to one of the connection pads, disposed in different layers, and connected by a wiring pattern, are disposed. In the second region, a third via and a fourth via, electrically connected to another of the connection pads, disposed in different layers, and connected by the wiring pattern, are disposed. A distance between axes of the first via and the second via is shorter than a distance between axes of the third via and the fourth via.


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