The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Mar. 27, 2014
Carl Zeiss Smt Gmbh, Oberkochen, DE;
Dirk Heinrich Ehm, Lauchheim, DE;
Gisela von Blanckenhagen, Aalen, DE;
Carl Zeiss SMT GmbH, Oberkochen, DE;
Abstract
A method for producing a capping layer () composed of silicon oxide SiOon a coating () of a mirror (), the coating reflecting EUV radiation () e.g. for use in an EUV lithography apparatus or in an EUV mask metrology system. The method includes irradiating a capping layer () composed of silicon nitride SiNor composed of silicon oxynitride SiNOfor converting the silicon nitride SiNor the silicon oxynitride SiNOof the capping layer () into silicon oxide SiO. An associated mirror () includes a capping layer comprised of silicon oxide SiO, and can be provided in an associated EUV lithography apparatus.