The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Sep. 02, 2014
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventors:

Vladimir N. Faifer, Santa Clara, CA (US);

Ian Sierra Gabriel Kelly-Morgan, San Francisco, CA (US);

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/308 (2006.01); G01R 1/07 (2006.01); G01R 31/26 (2014.01); G01R 31/265 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01R 1/071 (2013.01); G01R 31/2632 (2013.01); G01R 31/2656 (2013.01); H01L 22/14 (2013.01); G01R 31/2635 (2013.01);
Abstract

Non-contact measurement of one or more electrical response characteristics of a p-n junction includes illuminating a surface of the p-n junction with light of a first intensity having a modulation or pulsed characteristic sufficient to establish a steady-state condition in a junction photovoltage (JPV) of the p-n junction, measuring a first JPV from the p-n junction within the illumination area, illuminating the surface of the p-n junction with light of an additional intensity, measuring an additional photovoltage from the portion of the p-n junction within the illumination area, determining a photocurrent density of the p-n junction at the first intensity. The non-contact measurement further includes determining the forward voltage, the saturation current density, the ideality factor or one or more I-V curves with the measured first photovoltage, the measured additional photovoltage and/or the determined photocurrent density of the p-n junction.


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