The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Mar. 11, 2013
Applicant:

Tivra Corporation, Oakland, CA (US);

Inventor:

Indranil De, Mountain View, CA (US);

Assignee:

TIVRA CORPORATION, Pleasant Hill, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/04 (2006.01); C30B 23/06 (2006.01); C30B 25/10 (2006.01); C30B 23/02 (2006.01); C30B 13/24 (2006.01);
U.S. Cl.
CPC ...
C30B 23/066 (2013.01); C30B 13/24 (2013.01); C30B 23/02 (2013.01); C30B 23/04 (2013.01); C30B 25/105 (2013.01);
Abstract

A system for depositing a film on a substrate comprises a lateral control shutter disposed between the substrate and a material source. The lateral control shutter is configured to block some predetermined portion of source material to prevent deposition of source material onto undesirable portion of the substrate. One of the lateral control shutter or the substrate moves with respect to the other to facilitate moving a lateral growth boundary originating from one or more seed crystals. A lateral epitaxial deposition across the substrate ensues, by having an advancing growth front that expands grain size and forms a single crystal film on the surface of the substrate.


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