The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Jun. 21, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kaushal K. Singh, Santa Clara, CA (US);

Deepak Jadhav, Hubli, IN;

Ashutosh Agarwal, Jaipur, IN;

Ashish Goel, Bangalore, IN;

Vijay Parihar, Fremont, CA (US);

Er-Xuan Ping, Fremont, CA (US);

Randhir P. S. Thakur, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/02 (2006.01); C23C 16/54 (2006.01); C23C 14/56 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45525 (2013.01); H01L 21/0217 (2013.01); H01L 21/0262 (2013.01); H01L 21/02181 (2013.01); H01L 21/02381 (2013.01); H01L 21/02568 (2013.01); H01L 21/02658 (2013.01); H01L 21/6719 (2013.01); H01L 21/6723 (2013.01); H01L 21/67167 (2013.01); C23C 14/56 (2013.01); C23C 16/54 (2013.01);
Abstract

Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.


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