The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Mar. 11, 2014
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventor:

Yoshinobu Nakada, Ageo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/00 (2006.01); C30B 11/14 (2006.01); C01B 33/02 (2006.01); C30B 28/06 (2006.01); C30B 11/02 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C01B 33/02 (2013.01); C30B 11/02 (2013.01); C30B 11/14 (2013.01); C30B 28/06 (2013.01); C30B 29/06 (2013.01); Y10T 428/21 (2015.01);
Abstract

A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible.


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