The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2018

Filed:

Jul. 14, 2016
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Guangcai Fu, Shanghai, CN;

Tianlun Yang, Shanghai, CN;

Xiaoping Zhang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/528 (2006.01); B81C 1/00 (2006.01); H01L 21/475 (2006.01); B81B 7/00 (2006.01); H01L 21/02 (2006.01); H01L 23/532 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); B81B 7/007 (2013.01); B81C 1/00095 (2013.01); B81C 1/00849 (2013.01); H01L 21/02068 (2013.01); H01L 21/475 (2013.01); H01L 23/53219 (2013.01); H01L 23/53233 (2013.01); H01L 23/53247 (2013.01); H01L 29/0649 (2013.01); B81B 2201/0264 (2013.01); B81B 2207/07 (2013.01); B81C 2201/0132 (2013.01); H01L 2221/1063 (2013.01);
Abstract

Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.


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