The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Mar. 24, 2015
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Fayaz Shaikh, Portland, OR (US);
Sirish Reddy, Hillsboro, OR (US);
Assignee:
LAM RESEARCH CORPORATION, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01J 37/32 (2006.01); C23C 16/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/32 (2013.01); H01J 37/32082 (2013.01); H01J 37/32568 (2013.01); H01L 21/02109 (2013.01); H01L 21/02175 (2013.01); H01L 21/02183 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01J 2237/3321 (2013.01);
Abstract
A system and method for depositing a metal dielectric film includes arranging a substrate in a plasma enhanced chemical vapor deposition (PECVD) processing chamber; supplying a carrier gas to the PECVD processing chamber; supplying a dielectric precursor gas to the PECVD processing chamber; supplying a metal precursor gas to the PECVD processing chamber; creating plasma in the PECVD processing chamber; and depositing a metal dielectric film on the substrate at a process temperature that is less than 500° C.