The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Jan. 13, 2016
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Chun Hsiung Hung, Hsinchu, TW;
Shih Chou Juan, Taoyuan, TW;
Nai-Ping Kuo, Hsinchu, TW;
Yi Chun Liu, Zhubei, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50 (2013.01);
Abstract
A method for reading data from memory cells of a target word line in a semiconductor memory includes determining a disturbance status of the target word line. The disturbance status reflects a disturbance of a neighboring word line on the memory cells of the target word line. The method further includes determining a read voltage for the target word line according to the disturbance status of the target word line and applying the read voltage to the memory cells of the target word line.