The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2018

Filed:

Apr. 21, 2016
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Sandip Halder, Heverlee, BE;

Dieter Van Den Heuvel, Westerloo, BE;

Vincent Truffert, Vorst, BE;

Philippe Leray, Terhulpen, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G03F 7/20 (2006.01); G03F 1/84 (2012.01); G01N 21/88 (2006.01); G01N 21/956 (2006.01);
U.S. Cl.
CPC ...
G03F 7/7065 (2013.01); G01N 21/8851 (2013.01); G01N 21/95607 (2013.01); G03F 1/84 (2013.01); G03F 7/70441 (2013.01); G03F 7/70625 (2013.01); G03F 7/70641 (2013.01); G01N 2021/8854 (2013.01); G01N 2021/95676 (2013.01);
Abstract

The present disclosure is related to a method for detecting and ranking hotspots in a lithographic mask used for printing a pattern on a substrate. According to example embodiments, the ranking is based on defect detection on a modulated focus wafer or a modulated dose wafer, where the actual de-focus or dose value at defect locations is taken into account, in addition to a de-focus or dose setting applied to a lithographic tool when a mask pattern is printed on the wafer. Additionally or alternatively, lithographic parameters other than the de-focus or dose can be used as a basis for the ranking method.


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