The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Aug. 17, 2016
Applicant:

Elite Semiconductor Memory Technology Inc., Hsinchu, TW;

Inventors:

Yu-Hsuan Cheng, New Taipei, TW;

Jian-Sing Liou, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01); H03K 19/00 (2006.01);
U.S. Cl.
CPC ...
H03K 19/0005 (2013.01);
Abstract

A method for determining a resistance calibration direction in ZQ calibration of a memory device includes: repeatedly comparing a reference voltage with an target voltage by a comparator to obtain an odd plurality of comparison outputs, each of the comparison outputs being one of a high-level state and a low-level state; determining a majority of the comparison outputs for their states by a ZQ calibration controller; and determining a resistance calibration direction according to the majority by the ZQ calibration controller so that the ZQ calibration controller generates a calibration code based on the resistance calibration direction and applies the calibration code to a resistance calibration unit to adjust the target voltage via the resistance calibration unit.


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