The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Jun. 16, 2014
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Andreas Kiep, Munich, DE;

Stefan Willkofer, Munich, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 29/739 (2006.01); H01C 7/04 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01C 7/04 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01);
Abstract

A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of −40° C. is greater than at the temperature of 150° C.


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