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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9871100 B1

PDFFull Text
Date of Patent:
Jan. 16, 2018

Filed:

Jul. 29, 2015

Trench structure of semiconductor device having uneven nitrogen distribution liner

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jia-Ming Lin, Tainan, TW;

Shiu-Ko Jangjian, Tainan, TW;

Chun-Che Lin, Tainan, TW;

Ying-Lang Wang, Taichung, TW;

Wei-Ken Lin, Tainan, TW;

Chuan-Pu Liu, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/08 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/022 (2013.01); H01L 21/0214 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02271 (2013.01); H01L 21/02326 (2013.01); H01L 21/02337 (2013.01); H01L 21/3065 (2013.01); H01L 21/31051 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/785 (2013.01);
Abstract

A trench structure of a semiconductor device includes a substrate, an isolation structure, and a liner layer. The substrate has a trench therein. The isolation structure is disposed in the trench. The liner layer is disposed between the substrate and the isolation structure. The liner layer includes nitrogen, and the liner layer has spatially various nitrogen concentration.

Find Patent Forward Citations

Lin, Jia-Ming. (2018). Trench structure of semiconductor device having uneven nitrogen distribution liner (U.S. Patent No. 9871100). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9871100

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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