The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Dec. 31, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

I-Hsiang Hung, New Taipei, TW;

Wei-Der Sun, Hsinchu, TW;

Ching-Chen Hao, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/06 (2006.01); H01L 21/8234 (2006.01); H01L 49/02 (2006.01); H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/26506 (2013.01); H01L 21/28052 (2013.01); H01L 21/28518 (2013.01); H01L 21/823418 (2013.01); H01L 21/823443 (2013.01); H01L 28/20 (2013.01); H01L 29/0847 (2013.01); H01L 29/665 (2013.01);
Abstract

Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a gate stack on a semiconductor substrate. In some embodiments, the semiconductor device further includes a semiconductor element, such as for example, a resistor, on the semiconductor substrate. The semiconductor device includes a metal silicide layer on at least one of the gate stack, the source region, and the drain region. The semiconductor device also includes a blocking region in a portion of the semiconductor element. In some embodiments, the blocking region includes first dopants and second dopants with an atomic radius smaller than that of the first dopants.


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