The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Jan. 19, 2017
Globalfoundries Inc., Grand Cayman, KY;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method includes providing a semiconductor structure having a silicon mandrel layer, a hardmask stack and a dielectric layer. A 1portion and a 2portion of the mandrel layer are doped with a 1concentration and a 2greater concentration of dopant respectively. 1and 2mandrels are patterned into the 1and 2portions of the mandrel layer respectively. The 1and 2mandrels are oxidized in the same thermal oxidation process to form 1oxidation spacers on sidewalls of the 1mandrels and 2oxidation spacers on sidewalls of the 2mandrels. The 2oxidation spacers have a thickness that is greater than a thickness of the 1oxidation spacers. The 1and 2oxidation spacers are utilized to form 1and 2metal lines respectively in the dielectric layer. The 1and 2metal lines have a different thickness.