The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Jun. 09, 2011
Mehrdad M. Moslehi, Los Altos, CA (US);
Karl-josef Kramer, San Jose, CA (US);
Jay Ashjaee, Cupertino, CA (US);
George D. Kamian, Scotts Valley, CA (US);
David Mordo, Cupertino, CA (US);
Takao Yonehara, Sunnyvale, CA (US);
Mehrdad M. Moslehi, Los Altos, CA (US);
Karl-Josef Kramer, San Jose, CA (US);
Jay Ashjaee, Cupertino, CA (US);
George D. Kamian, Scotts Valley, CA (US);
David Mordo, Cupertino, CA (US);
Takao Yonehara, Sunnyvale, CA (US);
OB Realty, LLC, Irvine, CA (US);
Abstract
High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.