The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Mar. 11, 2014
Applicant:

Sh Materials Co., Ltd., Tokyo, JP;

Inventors:

Kaoru Hishiki, Isa, JP;

Shunichi Kidoguchi, Isa, JP;

Hiroki Nakayama, Isa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4825 (2013.01); H01L 21/4828 (2013.01); H01L 21/4846 (2013.01); H01L 23/49866 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Methods for producing a substrate for semiconductor element mounts are provided. A base substrate can be prepared having on a first metal layer, a second metal layer through which a metal layer for instrumentation is hardly diffusible. A patterned resist mask layer on the second metal layer can be formed. A surface of the second metal layer under reprocessing treatment can form a reprocessed surface which can be provided with an organic film that controls adhesion between the metal layer for instrumentation and the reprocessed surface by a liquid agent containing a component that shows the nature of amphoteric surfactant. The metal layer for instrumentation can be formed on the reprocessed surface via the organic film. A semiconductor element mount portion and an electrode terminal portion can be electroformed on the metal layer for instrumentation. The resist mask from the second metal layer of the base substrate may be removed.


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