The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Apr. 12, 2011
Applicants:
Atsushi Murota, Kawasaki, JP;
Takaaki Hirai, Kawasaki, JP;
Inventors:
Atsushi Murota, Kawasaki, JP;
Takaaki Hirai, Kawasaki, JP;
Assignee:
TOKYO OHKA KOGYO CO., LTD., Kawasaki-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 31/0264 (2006.01); H01L 31/04 (2014.01); H01L 21/228 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 21/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2225 (2013.01); H01L 21/228 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); H01L 21/18 (2013.01); H01L 21/182 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
A diffusion agent composition used in forming an impurity diffusion agent layer on a semiconductor substrate, and containing an impurity diffusion component, a silicon compound, and a solvent containing a solvent having a boiling point of 100° C. or less, a solvent having a boiling point of 120-180° C., and a solvent having a boiling point of 300° C.