The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Feb. 06, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Bongsoon Lim, Seoul, KR;

Seokmin Yoon, Seoul, KR;

Sang-Won Shim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01); G11C 16/08 (2006.01); G06F 11/20 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G06F 11/2094 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01);
Abstract

A nonvolatile memory device may include a cell array, a first page buffer, and a second page buffer. The first page buffer may be connected to a first memory cell of the cell array and may store first sensing data generated by sensing whether a program operation of the first memory cell is completed during a program verify operation. The second page buffer may be connected to a second memory cell of the cell array. During the program verify operation, the second page buffer may generate and store first verify data based on second sensing data generated by sensing whether a program operation of the second memory cell is completed, may receive the first sensing data from the first page buffer, and may store second verify data generated by accumulating the first sensing data and the first verify data.


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