The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Jul. 17, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Mayur Trivedi, Fremont, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/06 (2006.01); C23C 16/46 (2006.01); C23C 16/04 (2006.01); C23C 16/16 (2006.01); C23C 16/18 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
C23C 16/46 (2013.01); C23C 16/045 (2013.01); C23C 16/16 (2013.01); C23C 16/18 (2013.01); C23C 16/56 (2013.01);
Abstract

Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate, wherein the substrate at the first processing position is at a first temperature; (c) rotating the substrate to a second processing position; and (d) annealing the substrate at the second processing position to remove contaminants from the cobalt layer, wherein the substrate at the second processing position is at a second temperature greater than the first temperature.


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