The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2018
Filed:
Aug. 29, 2014
Applicants:
Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);
Rohm and Haas Electronic Materials Korea Ltd., Chungcheongnam-do, KR;
Inventors:
Christopher D. Gilmore, Watertown, MA (US);
Lujia Bu, Holden, MA (US);
Peng-Wei Chuang, Natick, MA (US);
Deyan Wang, Hudson, MA (US);
Yerang Kang, Ansan, KR;
Ping Ding, Acton, MA (US);
Young Seok Kim, Shrewsbury, MA (US);
Kathleen M. O'Connell, Cumberland, RI (US);
Assignees:
Rohm and Haas Electronic Materials LLC, Marlborough, MA (US);
Rohm and Haas Electronic Materials Korea Ltd, Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C08G 65/38 (2006.01); C09D 171/00 (2006.01); C08L 71/00 (2006.01); C08G 61/10 (2006.01); C08G 61/12 (2006.01); C09D 165/02 (2006.01); C08L 65/02 (2006.01); H01L 23/532 (2006.01); H01L 23/498 (2006.01); H01B 3/30 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
C08G 65/38 (2013.01); C08G 61/10 (2013.01); C08G 61/12 (2013.01); C08L 65/02 (2013.01); C08L 71/00 (2013.01); C09D 165/02 (2013.01); C09D 171/00 (2013.01); H01B 3/307 (2013.01); H01L 23/49894 (2013.01); H01L 23/5329 (2013.01); H01L 51/0035 (2013.01); C08G 2261/135 (2013.01); C08G 2261/1644 (2013.01); C08G 2261/312 (2013.01); C08G 2261/46 (2013.01); C08G 2261/64 (2013.01); C08G 2261/65 (2013.01); C08G 2261/76 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Certain polyarylene oligomers having improved solubility are useful in forming dielectric material layers in electronics applications.