The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Feb. 24, 2015
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Yu Lu, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
Xia Li, San Diego, CA (US);
Seung Hyuk Kang, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 23/544 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 23/544 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); G11C 11/16 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01);
Abstract
A semiconductor device includes an interconnect layer and a bottom electrode of a resistive memory device. The bottom electrode is coupled to the interconnect layer, and the bottom electrode is comprised of cobalt tungsten phosphorus (CoWP).