The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Aug. 24, 2012
Applicants:

Harry Hak-lay Chuang, Singapore, SG;

Ming Zhu, Singapore, SG;

Inventors:

Harry Hak-Lay Chuang, Singapore, SG;

Ming Zhu, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/739 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7391 (2013.01); H01L 21/823418 (2013.01); H01L 21/823885 (2013.01); H01L 27/092 (2013.01); H01L 29/0657 (2013.01); H01L 29/4238 (2013.01); H01L 29/42356 (2013.01); H01L 29/7889 (2013.01);
Abstract

A semiconductor device cell is disclosed. The semiconductor device cell includes a transistor gate having a gating surface and a contacting surface and a source region contacted by a source contact. The semiconductor device cell further includes a drain region contacted by a drain contact, wherein the drain contact is not situated opposite the source contact with respect to the gating surface of the transistor gate. Additional semiconductor device cells in which the gate contact is closer to the source contact than to the drain contact are disclosed.


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