The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Aug. 25, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jen-Chih Hsueh, Kaohsiung, TW;
Rong-Yu Wu, Hsinchu, TW;
Yi-Wei Chiu, Kaohsiung, TW;
Tsung-Fan Yin, Kaohsiung, TW;
Ying-Ting Hsia, Kaohsiung, TW;
Li-Te Hsu, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a spacer layer and a dielectric layer over a substrate. The spacer layer has an opening exposing the substrate, and the dielectric layer surrounds the spacer layer. The method includes forming a metal silicon nitride layer over a sidewall and a bottom surface of the opening. The method includes forming a first work function metal layer over the metal silicon nitride layer. The method includes removing a first top portion of the first work function metal layer. The method includes, after the removal of the first top portion, removing a second top portion of the metal silicon nitride layer. The method includes forming a conductive layer in the opening. The method includes removing a third top portion of the conductive layer and a fourth top portion of the metal silicon nitride layer.