The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Sep. 21, 2016
Mie Fujitsu Semiconductor Limited, Kuwana, Mie, JP;
Lucian Shifren, San Jose, CA (US);
Pushkar Ranade, Los Gatos, CA (US);
Scott E. Thompson, Gainesville, FL (US);
Sachin R. Sonkusale, Los Gatos, CA (US);
Weimin Zhang, San Jose, CA (US);
MIE Fujitsu Semiconductor Limited, Kuwana, JP;
Abstract
A structure and method of fabrication thereof relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced σVcompared to conventional bulk CMOS and can allow the threshold voltage Vof FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. The semiconductor structure includes an analog device and a digital device each having an epitaxial channel layer where a single gate oxidation layer is on the epitaxial channel layer of NMOS and PMOS transistor elements of the digital device and one of a double and triple gate oxidation layer is on the epitaxial channel layer of NMOS and PMOS transistor elements of the analog device.