The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Oct. 21, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Daisuke Suzuki, Nirasaki, JP;

Youichirou Chiba, Nirasaki, JP;

Takumi Yamada, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 21/768 (2006.01); C30B 1/02 (2006.01); C30B 29/06 (2006.01); C30B 29/08 (2006.01); H01L 21/74 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28525 (2013.01); C23C 16/045 (2013.01); C30B 1/023 (2013.01); C30B 29/06 (2013.01); C30B 29/08 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/28556 (2013.01); H01L 21/324 (2013.01); H01L 21/743 (2013.01); H01L 21/76843 (2013.01); H01L 21/76876 (2013.01); H01L 21/76879 (2013.01);
Abstract

There is provided a method of filling a recess of a workpiece, which includes: forming a first thin film made of a semiconductor material along a wall surface defining a recess in a semiconductor substrate; annealing the workpiece within a vessel whose internal process is set to a first pressure, and forming an epitaxial region which is generated by crystallizing the semiconductor material of the first thin film, along a surface defining the recess, without moving the first thin film; forming a second thin film made of the semiconductor material along the wall surface defining the recess; and annealing the workpiece within the vessel whose internal pressure is set to a second pressure lower than the first pressure, and forming a further epitaxial region which is generated by crystallizing the semiconductor material of the second thin film which is moved toward a bottom of the recess.


Find Patent Forward Citations

Suzuki, Daisuke. (2018). Recess filling method and processing apparatus (U.S. Patent No. 9865467). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9865467

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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