The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Nov. 29, 2010
Stan Kassela, Singapore, SG;
Wei Xu, Singapore, SG;
Lim Boon Leong, Singapore, SG;
Liu Hao Jun, Singapore, SG;
Chun Wai Tong, Singapore, SG;
Weilu H. Xu, San Jose, GA (US);
Thomas Larson Greenberg, Berkeley, CA (US);
Antonio Javier Zambano, San Jose, CA (US);
Robin Andrew Davies, Livemore, CA (US);
Stan Kassela, Singapore, SG;
Wei Xu, Singapore, SG;
Lim Boon Leong, Singapore, SG;
Liu Hao Jun, Singapore, SG;
Chun Wai Tong, Singapore, SG;
Weilu H. Xu, San Jose, GA (US);
Thomas Larson Greenberg, Berkeley, CA (US);
Antonio Javier Zambano, San Jose, CA (US);
Robin Andrew Davies, Livemore, CA (US);
Seagate Technology LLC, Cupertino, CA (US);
Abstract
A sputtering apparatus includes a sputtering cathode and a target overlying the sputtering cathode. A shield overlies the target and forms an aperture configured to direct sputtering particles onto a substrate. The shield includes a lower shield portion overlying the target, a channel outlet overlying the lower shield portion, and an upper shield portion overlying the channel. In some embodiments the shield includes a first shield and a second shield. The first shield includes a front gas injection outlet. The second shield overlies the first shield and forms the aperture. In various embodiments, the second shield is operable to adjust plasma confinement between the first shield and the second shield.