The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Mar. 31, 2017
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Maurizio Francesco Perroni, Furnari, IT;

Carmelo Paolino, Palermo, IT;

Salvatore Polizzi, Palermo, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza (MB), IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01);
Abstract

A phase change memory device includes two portions with local bitlines connected to memory cells. A reading stage is configured to read logic data stored by the first and second memory cells. A first main bitline extends between the reading stage and the first local bitlines and a first main switch is coupled between the first main bitline and reading stage and likewise for the second portion. Local switches are associated with respective ones of the local bitlines. A first reference signal generator is coupled to the reading stage. The phase change memory device is configured to operate in a first reading mode, in which the logic data stored by the first memory cell is read by the reading stage by comparison with the reference signal.


Find Patent Forward Citations

Loading…