The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Nov. 26, 2014
Hoya Corporation, Tokyo, JP;
HOYA CORPORATION, Shinjuku-ku, Tokyo, JP;
Abstract
To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film, protective film, and phase-shift filmfor shifting a phase of the EUV light, which are formed in said order on a substrate. The protective filmis made of a material containing ruthenium as a main component, the phase-shift filmhas a tantalum-based material layer comprising tantalum, and an anti-diffusion layercomprising ruthenium and oxygen is formed on a surface of the protective film, or as a part of the protective filmon a side adjacent to the phase-shift layer, so as to inhibit counter diffusion in relation to the phase-shift film, thereby inhibiting the thermal diffusion between the protective filmand the material of the phase-shift film pattern.