The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Mar. 14, 2013
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Maurice E. Ewert, San Jose, CA (US);

Anantha Subramani, San Jose, CA (US);

Umesh M. Kelkar, Santa Clara, CA (US);

Chandrasekhar Balasubramanyam, Bangalore, IN;

Joseph M. Ranish, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/58 (2006.01); C23C 14/34 (2006.01); C23C 14/54 (2006.01); C23C 16/458 (2006.01); C23C 16/48 (2006.01); H01J 37/34 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 14/5806 (2013.01); C23C 14/34 (2013.01); C23C 14/3435 (2013.01); C23C 14/541 (2013.01); C23C 16/4581 (2013.01); C23C 16/481 (2013.01); H01J 37/3411 (2013.01); H01J 37/3488 (2013.01); H01L 21/2855 (2013.01); H01L 21/324 (2013.01); H01L 21/67115 (2013.01); H01L 21/68742 (2013.01); H01L 21/76882 (2013.01); H01L 21/02104 (2013.01); H01L 21/28518 (2013.01); H01L 21/67248 (2013.01);
Abstract

Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.


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