The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Sep. 19, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 27/088 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 29/42356 (2013.01); H01L 29/51 (2013.01); H01L 29/785 (2013.01);
Abstract
An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.