The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2018

Filed:

Nov. 22, 2016
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Ching-Hung Kao, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14689 (2013.01); H01L 27/1463 (2013.01); H01L 27/14609 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 31/1804 (2013.01);
Abstract

A method for manufacturing semiconductor devices includes following steps. A substrate having a pixel region and a periphery region defined thereon is provided, and at least a transistor is formed in the pixel region. A blocking layer is formed on the substrate, and the blocking layer includes a first opening exposing a portion of the substrate in the pixel region and a second opening exposing a portion of the transistor. A first conductive body is formed in the first opening and a second conductive body is formed in the second opening, respectively. The first conductive body protrudes from the substrate and the second conductive body protrudes from the transistor. A portion of the blocking layer is removed. A first salicide layer is formed on the first conductive body and a second salicide layer is formed on the second conductive body, respectively.


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