The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Jun. 09, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Veeraraghavan S. Basker, Schenectady, NY (US);
Effendi Leobandung, Stormville, NY (US);
Dieter Wendel, Boeblingen, DE;
Tenko Yamashita, Schenectady, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 27/11 (2006.01); H01L 29/161 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0886 (2013.01); H01L 27/1104 (2013.01); H01L 27/1108 (2013.01); H01L 29/161 (2013.01); H01L 29/167 (2013.01);
Abstract
A method includes selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET. The second finFET is electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET.