The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Aug. 03, 2015
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Meng Meng Chong, Singapore, SG;
Xuesong Rao, Singapore, SG;
Chim Seng Seet, Singapore, SG;
Xiaohua Zhan, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); C22C 9/01 (2006.01); C22C 9/05 (2006.01); C22C 9/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); C22C 9/00 (2013.01); C22C 9/01 (2013.01); C22C 9/05 (2013.01); H01L 24/03 (2013.01); H01L 24/85 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05023 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/858 (2013.01);
Abstract
Integrated circuits having copper bonding structures with silicon carbon nitride passivation layers and methods for making the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate and a copper bonding structure having a contact surface. The copper bonding structure overlies the substrate. A passivation layer formed of silicon carbon nitride is disposed on the contact surface.