The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Dec. 22, 2016
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/0408 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/3427 (2013.01);
Abstract
A memory device includes N word lines, wherein the word lines include an iword line coupled to an imemory cell and an (i+1)word line coupled to an (i+1)memory cell which is disposed adjacent to the imemory cell and is a programmed memory cell, and i is an integer from 0 to (N−2). A method of operating such a memory device method includes a reading step. In the reading step, a read voltage is provided to the iword line, a first pass voltage is provided to the (i+1)word line, and a second pass voltage is provided to the others of the word lines, wherein the second pass voltage is lower than the first pass voltage.