The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Dec. 22, 2016
Intel Corporation, Santa Clara, CA (US);
Shih-Lien Lu, Portland, OR (US);
Helia Naeimi, Santa Clara, CA (US);
Shigeki Tomishima, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments include apparatuses and systems including a circuit which increases a speed of removal of data stored in a memory cell. In embodiments, the circuit includes a first discharge device coupled to an access transistor of a memory cell and coupled to an output terminal of a charge pump circuit to pull up a first voltage level at the output terminal to ground in response to a signal to accelerate leakage of a first leakage current; and a second discharge device coupled to a voltage generator circuit to pull down a second voltage level at a cell plate node of the memory cell to ground in response to the signal to accelerate leakage of a second leakage current, wherein the cell plate node is coupled to a storage node of the memory cell by a capacitor. Other embodiments may also be described and claimed.