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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9857686 B1

PDFFull Text
Date of Patent:
Jan. 02, 2018

Filed:

Jun. 10, 2016

Composition for forming resist underlayer film and patterning process

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Tsutomu Ogihara, Jyoetsu, JP;

Daisuke Kori, Jyoetsu, JP;

Jun Hatakeyama, Jyoetsu, JP;

Naoki Kobayashi, Jyoetsu, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); G03F 7/16 (2006.01); G03F 7/30 (2006.01); G03F 7/09 (2006.01); G03F 7/36 (2006.01); G03F 7/40 (2006.01); C09D 161/22 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C09D 161/22 (2013.01); G03F 7/091 (2013.01); G03F 7/168 (2013.01); G03F 7/2053 (2013.01); G03F 7/30 (2013.01); G03F 7/322 (2013.01); G03F 7/36 (2013.01); G03F 7/40 (2013.01); H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01);
Abstract

The present invention provides a composition for forming a resist underlayer film, containing an organic solvent and either or both of a compound shown by the following general formula (1) and a condensate of the compound. There can be provided a composition for forming a resist underlayer film that is capable of forming an underlayer film, especially for use in a three-layer resist process, that can reduce reflectance, has high pattern-bend resistance, and prevents line fall and wiggling after etching of a high aspect line especially thinner than 60 nm, and a patterning process using the same.

Find Patent Forward Citations

Ogihara, Tsutomu. (2018). Composition for forming resist underlayer film and patterning process (U.S. Patent No. 9857686). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9857686

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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