The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Feb. 17, 2015
Applicants:

Xerox Corporation, Norwalk, CT (US);

Palo Alto Research Center Incorporated, Palo Alto, CA (US);

Inventors:

Tse Nga Ng, Sunnyvale, CA (US);

Ping Mei, San Jose, CA (US);

Yiliang Wu, San Ramon, CA (US);

Biby Esther Abraham, Mississauga, CA;

Assignees:

XEROX CORPORATION, Norwalk, CT (US);

PALO ALTO RESEARCH CENTER INCORPORATED, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/10 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01); H01B 1/22 (2006.01);
U.S. Cl.
CPC ...
H01L 51/105 (2013.01); H01B 1/22 (2013.01); H01L 51/0022 (2013.01); H01L 51/055 (2013.01); H01L 51/0541 (2013.01); H01L 51/0545 (2013.01);
Abstract

A transistor has a substrate, source and drain electrodes on the substrate, the source and drain electrodes formed of a conductor ink having silver nanoparticles with integrated dipolar surfactants, an organic semiconductor forming a channel between the source and drain electrodes, the organic semiconductor in contact with the source and drain electrodes, a gate dielectric layer having a first surface in contact with the organic semiconductor, and a gate electrode in contact with a second surface of the gate dielectric layer, the gate electrode formed of silver nanoparticles with integrated dipolar surfactants.


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