The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Oct. 28, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/535 (2006.01); H01L 23/532 (2006.01); H01L 29/49 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/53266 (2013.01); H01L 29/4966 (2013.01);
Abstract
A semiconductor structure includes a substrate having thereon a dielectric layer. An opening is formed in the dielectric layer. The opening includes a bottom surface and a sidewall surface. A diffusion barrier layer is conformally disposed along the sidewall surface and the bottom surface of the opening. A nucleation metal layer is conformally disposed on the diffusion barrier layer. A bulk metal layer is disposed on the nucleation metal layer. A film-growth retarding layer is disposed between the nucleation metal layer and the bulk metal layer.