IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9853118 B1

PDFFull Text
Date of Patent:
Dec. 26, 2017

Filed:

Dec. 09, 2016

Diode-based devices and methods for making the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventor:

Anthony J. Lochtefeld, Ipswich, MA (US);

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Bo Fan

Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 29/66 (2006.01); H01L 33/18 (2010.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 31/0352 (2006.01); H01L 31/036 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 29/6609 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02546 (2013.01); H01L 21/02636 (2013.01); H01L 21/02639 (2013.01); H01L 29/045 (2013.01); H01L 31/036 (2013.01); H01L 31/035209 (2013.01); H01L 31/1812 (2013.01); H01L 33/0054 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01);
Abstract

In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.

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