The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Jan. 05, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Hsien-Yu Pan, Hsinchu, TW;

Jung-Hsuan Chen, Hsinchu, TW;

Shao-Yu Chou, Chu Pei, TW;

Yen-Huei Chen, Jhudong Township, TW;

Hung-Jen Liao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/02 (2006.01); H01L 21/768 (2006.01); H01L 27/118 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1116 (2013.01); H01L 21/768 (2013.01); H01L 27/0207 (2013.01); H01L 27/11 (2013.01); H01L 2027/11887 (2013.01);
Abstract

A method and layout for forming word line decoder devices and other devices having word line decoder cells provides for forming metal interconnect layers using non-DPL photolithography operations and provides for stitching distally disposed transistors using a lower or intermediate metal layer or a subjacent conductive material. The transistors may be disposed in or adjacent longitudinally arranged word line decoder or other cells and the conductive coupling using the metal or conductive material lowers gate resistance between transistors and avoids RC signal delays.


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