Through-body via formation techniques

Abstract

Techniques are disclosed for forming a through-body-via (TBV) in a semiconductor die. In accordance with some embodiments, a TBV provided using the disclosed techniques includes a polymer-based barrier layer and an electrically conductive seed layer formed by applying an electrically conductive ink directly to the barrier layer and then curing it in situ. In some embodiments, after curing, the resultant seed layer may be a thin, substantially conformal, electrically conductive metal film over which the TBV interconnect metal can be deposited. In some example cases, a polyimide, parylene, benzocyclobutene (BCB), and/or polypropylene carbonate (PPC) barrier layer and an ink containing copper (Cu) and/or silver (Ag), of nanoparticle-based or metal complex-based formulation, may be used in forming the TBV. In some instances, the disclosed techniques may be used to address poor step coverage, low run rate, and/or high cost issues associated with existing physical vapor deposition (PVD)-based far-back-end-of-line (FBEOL) processes.