The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2017

Filed:

Feb. 21, 2013
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Toshiaki Fujita, Naka, JP;

Hiroshi Tanaka, Naka, JP;

Hitoshi Inaba, Naka, JP;

Kazutaka Fujiwara, Naka, JP;

Noriaki Nagatomo, Naka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/045 (2006.01); H01C 7/00 (2006.01); H01C 7/04 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C30B 29/38 (2006.01); G01K 7/22 (2006.01);
U.S. Cl.
CPC ...
H01C 7/008 (2013.01); C23C 14/0036 (2013.01); C23C 14/0641 (2013.01); C30B 29/38 (2013.01); G01K 7/22 (2013.01); H01C 7/04 (2013.01); H01C 7/041 (2013.01);
Abstract

Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TiAl(NO)(where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.


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