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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9847423 B1

PDFFull Text
Date of Patent:
Dec. 19, 2017

Filed:

Apr. 05, 2017

Semiconductor device and method for fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Huang-Ren Wei, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Nicholas Tobergte

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/31111 (2013.01); H01L 21/823431 (2013.01); H01L 21/823878 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01);
Abstract

A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a shallow trench isolation (STI) around the fin-shaped structure; removing part of the fin-shaped structure and part of the STI to form a first trench and removing part of the STI adjacent to the fin-shaped structure to form a second trench; and forming a dielectric layer into the first trench and the second trench to form a first single diffusion break (SDB) and a second single diffusion break.

Find Patent Forward Citations

Wei, Huang-Ren. (2017). Semiconductor device and method for fabricating the same (U.S. Patent No. 9847423). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9847423

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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